MSF14N60 n - channel enhancement mode power mosfet publication order number: [ MSF14N60 ] ? bruckewell technology corporation rev. a - 2014 description the ms14n60 is a n - channel enhancement - mode mosfet, providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220f package is universally preferred for all com mercial - industrial applications features ? low on resistance ? simple drive requirement ? fast switching characteristic ? insulating package, front/back side insulating voltage=2500v(ac) ? rohs compliant package application ? adapter ? switching mode powe r supply packing & order information 50/tube ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings symbol parameter value unit v ds s drain - source voltage 6 0 0 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 1 4 a drain current - continuous (tc= 100 c ) 8 .4 a i dm drain current pulsed 56 a e as s ingle pulsed avalanche energy 53 mj i ar avalanche current 14.0 a e ar repetitive avalanche energy 16 mj dv/dt peak diode recovery dv/dt 4 .5 v/ns
MSF14N60 n - channel enhancement mode power mosfet publication order number: [ MSF14N60 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings symbol parameter value unit p d total power dissipation(@tc = 25 c) 60 w derating factor above 25 c 60 w 0. 35 w/ c ? drain current limited by maximum junction temperature absolute maximum ratings (tc=25c un less otherwise noted) symbol parameter value unit t l maximum temperature for soldering @ lead at 0.125 in(0.318mm) from case for 10 seconds 300 c t stg operating junction temperature - 55 ~ 150 w t j storage temperature 150 c note: 1. repetitive ratin g; pulse width limited by maximum junction temperature. 2. ias=14a, vdd=50v, l=0.5mh, rg=25, starting tj=+25c. 3. isd7.5a, di/dt100a/s, vddbvdss, starting tj=+25c. 4. drain current limited by maximum junction temperature thermal characteristics sy mbol parameter max. unit s r jc thermal resistance, junction - to - case 2.58 c /w r ja thermal resistance, junction - to - ambient 100 static characteristics symbol parameter test conditions min typ. max. unit s v gs (th) gate threshold voltage v ds =v gs ,i d =250a v gs =10v,i d = 3 a 2.0 -- 4.0 v r ds(on) static drain - source on - resistance -- -- 0. 5 5 b v dss drain - source breakdown voltage v gs =0 v , i d =250a tj=150c 600 660 -- v b v dss / t j breakdown voltage temperature coefficient i d =250a, referenced to 25 c -- 0 .7 -- v/ c i dss drain - source leakage current v ds = 60 0v , v gs = 0 v v ds = 48 0v , t c = 125 c -- -- 1 10 a i gss gate - body leakage , forward v gs =30 -- -- 100 n a
MSF14N60 n - channel enhancement mode power mosfet publication order number: [ MSF14N60 ] ? bruckewell technology corporation rev. a - 2014 dynamic characteristics symbol parameter test conditions min typ. max. unit s t d(on) turn - on tim e v ds = 25 0 v, i d = 14 a, v gs =10v , r g =9.1 -- 40 -- ns t r turn - on time -- 10 -- ns t d(off) turn - off delay time -- 15 -- ns tf turn - off fall time -- 16 -- ns q g total gate charge v ds = 250 v,i d = 14a , v gs = 10 v -- 30 -- nc q gs gate - source charge -- 48 -- nc q g d gate - drain charge (miller charge) -- 34 -- nc dynamic characteristics symbol parameter test conditions min typ. max. unit s c iss input capacitance v ds =25v, v gs =0v, f=1.0mhz -- 2222 -- pf c oss output capacitance -- 180 -- pf c rss reverse transfe r capacitance -- 17 -- pf source - drain diode maximum ratings and characteristics symbol parameter test conditions min typ. max. unit s i s vd=vg=0, vs=1.3v -- -- 14 a i sm -- -- 56 v sd i s = 12 a , v gs = 0v -- -- 1. 5 v t rr i s = 12 a , v gs = 0v dif/dt=100 a/s -- 392 -- ns q rr -- 3529 -- u c *pulse test : pulse width 300s, duty cycle2%
MSF14N60 n - channel enhancement mode power mosfet publication order number: [ MSF14N60 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. br uckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applicati ons. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a particular product with the properties described in the product specification is suitabl e for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwise modify bruckewells terms and condition s of purchase, including but not limited to the warranty expressed therein.
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